Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors

نویسندگان

  • Jianxin Chen
  • Qingqing Xu
  • Yi Zhou
  • Jupeng Jin
  • Chun Lin
  • Li He
چکیده

We report our recent work on the growth and fabrication of InAs/GaSb type II superlattice photodiode detectors. The superlattice consists of 9 monolayer InAs/12 monolayer GaSb in each period. Lattice mismatch between the GaSb substrate and the superlattice is 1.5 × 10-4. The full width at half maximum of the first-order satellite peak from X-ray diffraction is 28 arc sec. The P-I-N photodiodes in which the absorption regions (I regions) have 600 periods of superlattice show a 50% cutoff wavelength of 4.3 μm. The current responsivity was measured at 0.48 A/W from blackbody radiation. The peak detectivity of 1.75 × 1011 cmHz1/2/W and the quantum efficiency of 41% at 3.6 μm were obtained.PACS: 85.60.-q; 85.60.Gz; 85.35.-Be.

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عنوان ژورنال:

دوره 6  شماره 

صفحات  -

تاریخ انتشار 2011